Design of Semiconductor Contact Grating Terahertz Source with Enhanced Diffraction Efficiency
We report a semiconductor contact grating terahertz source design based on a rectangular profile for phase-matched terahertz generation in the long infrared pump wavelength range. The calculations show that the best diffraction efficiency can be achieved by a filling factor significantly smaller tha...
Elmentve itt :
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| Dokumentumtípus: | Cikk |
| Megjelent: |
2022
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| Sorozat: | CRYSTALS
12 No. 8 |
| Tárgyszavak: | |
| doi: | 10.3390/cryst12081173 |
| mtmt: | 33077051 |
| Online Access: | http://publicatio.bibl.u-szeged.hu/26715 |
| Tartalmi kivonat: | We report a semiconductor contact grating terahertz source design based on a rectangular profile for phase-matched terahertz generation in the long infrared pump wavelength range. The calculations show that the best diffraction efficiency can be achieved by a filling factor significantly smaller than 50%. Furthermore, the possibility of diffraction efficiency enhancement was investigated by applying three different antireflective coating structures. Numerical simulations have indicated that at 2.06 μm and 3.0 μm pump wavelength, diffraction efficiencies greater than 91% and 89% can be achieved by adding an appropriate antireflective coating to the GaP and GaAs contact grating structure, respectively. In addition, numerical simulations were performed to investigate the influence of wall angles on diffraction efficiency. The results reveal that the wall angle does not significantly affect the diffraction efficiency: while keeping the wall angle deviation from the vertical below 25 degrees, the efficiency drop remains below 5% for otherwise optimal grating parameters. |
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| Terjedelem/Fizikai jellemzők: | 11 |
| ISSN: | 2073-4352 |