TiO2 thin films on si substrate obtained by PLD for sensing applications
Titanium dioxide (TiO2) thin films were deposited by pulsed laser deposition on Si substrate. An KrF excimer laser with wavelength of 248 nm was used for the irradiation of TiO2 targets. The substrates were heated during the film deposition at 400°C under an oxygen pressure of 35 mTorr, 50 mTorr and...
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| Dokumentumtípus: | Könyv része |
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2015
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| Sorozat: | Proceedings of the International Symposium on Analytical and Environmental Problems
21 |
| Kulcsszavak: | Elektrokémia |
| Online Access: | http://acta.bibl.u-szeged.hu/55936 |
| Tartalmi kivonat: | Titanium dioxide (TiO2) thin films were deposited by pulsed laser deposition on Si substrate. An KrF excimer laser with wavelength of 248 nm was used for the irradiation of TiO2 targets. The substrates were heated during the film deposition at 400°C under an oxygen pressure of 35 mTorr, 50 mTorr and 65 mTorr. The XRD results reveal the growth of TiO2 thin film deposited on Si substrate in pure anatase phase. AFM topography of as deposited film indicates the formation of uniform TiO2 on substrate and particles size depending of the oxygen pressure. The optical properties of films have been recorded using UV-Vis spectrophotometer in the wavelength range 400-800 nm. |
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| Terjedelem/Fizikai jellemzők: | 94-97 |
| ISBN: | 978-963-306-411-5 |