Broadband GaP contact-grating terahertz source pumped at 3.9 µm
A gallium phosphide (GaP) semiconductor contact-grating THz source with trapezoidal grating groove profile, pumped at a mid-infrared wavelength of 3.9 μm, was demonstrated. The source can be scaled to high electric fields beyond 1 MV/cm due to the plane-parallel geometry, the availability of large G...
Elmentve itt :
| Szerzők: | |
|---|---|
| Dokumentumtípus: | Cikk |
| Megjelent: |
2026
|
| Sorozat: | OPTICS EXPRESS
34 No. 8 |
| Tárgyszavak: | |
| doi: | 10.1364/OE.588300 |
| mtmt: | 37085430 |
| Online Access: | http://publicatio.bibl.u-szeged.hu/40512 |